Intel: Neuromorphic 2D PMOS Intel Strategic Research Area (ISRA)

The overarching goals or research vectors (RVs) of the center are the following:

RV1. Prototype a PMOS 2D device hitting key performance targets: > 600uA/um Ion, low contact resistance (Rc) <= 200 Ohm-um with electrostatic gating and subthreshold slope (SS) < 100 mV/decade, proof of principle.

RV2. Low PMOS contact resistance without electrostatic gating; solutions need an integration path to 300mm.

RV3. High-throughput, non-destructive and predictive metrology of 2D PMOS mobility and/or defect density and type.

Funding: typical grants will support one student or postdoc per 3 years projects.

Pay attention:  The program implements an open IP policy which implies that all provided information and results cannot be IP protected.

https://www.ra.trdf.co.il/files/Intel 2D PMOS ISRA RFP.pdf