Intel: Novel methods of fabrication of ferroelectric structures that can be switched with low energy

Intel’s University Research & Collaboration Office (URC) invites proposals to explore material/structure solutions and methods of fabrication towards realization of <0.2V switching, energy efficient (EE) ferroelectric FET (FEFET). Intel intends to fund a new collaborative, multi-university research center addressing three Research Vectors (RVs):

RV1. Deposition of ferroelectrics

RV2. Interfaces with ferroelectrics

RV3. Integration of a complete FEFET

Funding: ~$150K/year over up to 3 years. This typically supports 1-2 graduate students advised by 1-2 PIs. We expect to receive roughly 20 proposals and award 3-4 grants.

* Intel is unable to receive proposals under an obligation of confidentiality. All proposals submitted should therefore include only public information.

* RFP Information Sessions: Intel staff will host 1-3 conference calls to answer questions and clarify information on the RFP. The first session will be held virtually on JAN 26th 10-11am PST.  If interested, please send an email request, and meeting details will be shared. (sowmya.venkataramani@intel.com)

https://www.ra.trdf.co.il/files/Intel COFEEE RFP.pdf