DARPA: Integrity and Reliability of Integrated CircuitS (IRIS)

 DARPA: Integrity and Reliability of Integrated CircuitS (IRIS) has the below research interests:

Front End of Line (FEOL) physical effects specifically relate to physical changes to the CMOS FET. FEOL effects include, but are not limited to, hot carrier injection, impact inonization, negative and positive bias temperature instability, prompt shift, gate oxide time dependent dielectric breakdown (GO-TDDB), and ionics.

Back End of Line (BEOL) physical effects relate to physical changes to chip interconnects (1X, 2X, 8X, and 16X λ wiring layers). BEOL effects of interest include but are not limited to electromigration, stress migration, Cu corrosion, dendrite growth, whiskers, and intra/inter-layer TDDB.

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